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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2834 2SC2834A DESCRIPTION With TO-3PN package High speed switching High VCBO Low collector saturation voltage APPLICATIONS For high speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER VCBO VCEO VEBO IC ICM IB CHA IN Collector-base voltage E SEM NG 2SC2834 2SC3834A OND IC CONDITIONS TOR UC VALUE 800 900 500 8 7 15 4 UNIT Open emitter V Collector-emitter voltage Open base Open collector V V A A A Emitter-base voltage Collector current (DC) Collector current-peak Base current (DC) Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 2.5 W 100 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS 2SC2834 2SC2834A SYMBOL MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;L=25mH 500 V VCEsat VBEsat Collector-emitter saturation voltage IC=5A ;IB=1A IC=5A ;IB=1A 1.0 V Base-emitter saturation voltage 1.5 V 2SC2834 ICBO Collector cut-off current 2SC3834A VCB=800V; IE=0 0.1 VCB=900V; IE=0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=0.1A ; VCE=5V hFE-2 fT DC current gain Transition frequency IC=5A ; VCE=5V Switching times ton CHA IN Turn-on time Storage time E SEM NG 2SC2834 2SC2834A IC=0.5A ; VCE=10V;f=1MHz OND IC TOR UC 8 3.5 1.0 15 MHz |I 1.2 IC=5.0A; VCC=200V IB1=1A ,IB2=-1A 2SC2834 s ts 2.5 |I s 1.0 |I s tf Fall time 2SC2834A 1.2 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2834 2SC2834A CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.10 mm) 3 |
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